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GMF05LC-HS3
Vishay Semiconductors
5-Line ESD-Protection Diode Array in LLP75-6A
Features
* * * * * Ultra compact LLP75-6A package 5-line ESD-protection Low leakage current IR < 0.1 A Low load capacitance of typ. 43 pF at VR = 0 V ESD-immunity acc. IEC 61000-4-2 30 kV contact discharge 30 kV air discharge Working voltage range VRWM = 5 V Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
6 5 4
1
2
3
19956
19957
* * *
1
Marking (example only)
XX YY
21001
Dot = Pin 1 marking XX = Date code YY = Type code (see table below)
Ordering Information
Device name GMF05LC-HS3 Ordering code GMF05LC-HS3-GS08 Taped units per reel (8 mm tape on 7" reel) 3000 Minimum order quantity 15000
Package Data
Device name GMF05LC-HS3 Package name LLP75-6A Type code F6 Weight 5.1 mg Molding compound flammability rating UL 94 V-0 Moisture sensitivity level Soldering conditions
MSL level 1 (according J-STD-020) 260 C/10 s at terminals
Absolute Maximum Ratings
Rating Peak pulse current Peak pulse power Test condition BiAs-mode: each input (pin 1; 3 - pin 6) to ground (pin 2); acc. IEC 61000-4-5; tp = 8/20 s; single shot BiAs-mode: each input (pin 1; 3 - pin 6) to ground (pin 2); acc. IEC 61000-4-5; tp = 8/20 s; single shot acc. IEC61000-4-2; 10 pulses BiAs-mode: each input (pin 1; 3 - pin 6) to ground (pin 2) Junction temperature contact discharge air discharge Symbol IPPM PPP VESD VESD TJ TSTG Value 5 70 30 30 - 55 to + 125 - 55 to + 150 Unit A W kV kV C C
ESD-immunity
Operating temperature Storage temperature
* Please see document "Vishay Green and Halogen-Free Definitions (5-2008)" http://www.vishay.com/doc?99902 Document Number 85655 Rev. 1.7, 22-Sep-08 For technical support, please contact: ESD-Protection@vishay.com www.vishay.com 1
GMF05LC-HS3
Vishay Semiconductors BiAs-Mode (5-line Bidirectional Asymmetrical protection mode)
With the GMF05LC-HS3 up to 5 signal- or data-lines (L1 - L5) can be protected against voltage transients. With pin 2 connected to ground and pin 1; 3 up tp pin 6 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified Maximum Reverse Working Voltage (VRWM) the protection diode between data line and ground offer a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The Clamping Voltage (VC) is defined by the BReakthrough Voltage (VBR) level plus the voltage drop at the series impedance (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low Forward Voltage (VF) clamps the negative transient close to the ground level. Due to the different clamping levels in forward and reverse direction the GMF05LC-HS3 clamping behaviour is Bidirectional and Asymmetrical (BiAs).
L1 L5 L4 L3
1 2
5 4 3
L2
3
20739
Electrical Characteristics
Ratings at 25 C ambient temperature, unless otherwise specified
GMF05LC-HS3
BiAs mode: each input (pin 1, 3, 4, 5, 6) to ground (pin 2) Parameter Protection paths Reverse stand-off voltage Reverse current Reverse breakdown voltage Reverse clamping voltage at IPP = IPPM = 5 A; acc. IEC 61000-4-5 at IF = 1 A; acc. IEC 61000-4-5 Forward clamping voltage at IPP = IPPM = 5 A; acc. IEC 61000-4-5 at VR = 0 V; f = 1 MHz Line capacitance at VR = 2.5 V; f = 1 MHz CD 25 pF VF CD 3.1 43 4 50 V pF VC VF 11.5 1.5 12.5 2 V V Test conditions/remarks number of line which can be protected at IR = 1 A at VR = VRWM = 5 V at IR = 1 mA at IPP = 1 A; acc. IEC 61000-4-5 Symbol N lines VRWM IR VBR VC 6 8 5 0.01 0.1 8 9.5 Min. Typ. Max. 5 Unit lines V A V V
If a higher surge current or Peak Pulse current (IPP) is needed, some protection diodes in the GMF05LC-HS3 can also be used in parallel in order to "multiply" the performance. If two diodes are switched in parallel you get * double surge power = double peak pulse current (2 x IPPM) * half of the line inductance = reduced clamping voltage * half of the line resistance = reduced clamping voltage * double line Capacitance (2 x CD) * double Reverse leakage current (2 x IR)
www.vishay.com 2 For technical support, please contact: ESD-Protection@vishay.com Document Number 85655 Rev. 1.7, 22-Sep-08
GMF05LC-HS3
Vishay Semiconductors
L1
1 2 3
6 5 4
L2
L3
20740
Typical Characteristics
Tamb = 25 C, unless otherwise specified
120 % Rise time = 0.7 ns to 1 ns 100 % 80 % 60 %
53 %
50 45 40 35 f = 1MHz
Discharge Current IESD
CD (pF)
30 25 20 BiAs-mode
40 %
27 %
15 10 5
BiSy-mode
20 % 0% - 10 0 10 20 30 40 50 60 70 80 90 100
20557
0 0
20281
1
2
3
4
5
6
Time (ns)
VR (V)
Figure 1. ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 /150 pF)
Figure 3. Typical Capacitance CD vs. Reverse Voltage VR
100 100 % 80 % 60 % 20 s to 50 % 40 % 20 % 0% 0
20548
8 s to 100 % 10
BiAs-mode
IF (mA)
40
1
IPPM
0.1
0.01
10
20
30
0.001 0.5
20282
0.6
0.7
0.8
0.9
1
Time (s)
VF (V)
Figure 2. 8/20 s Peak Pulse Current Wave Form acc. IEC 61000-4-5
Figure 4. Typical Forward Current IF vs. Forward Voltage VF
Document Number 85655 Rev. 1.7, 22-Sep-08
For technical support, please contact: ESD-Protection@vishay.com
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GMF05LC-HS3
Vishay Semiconductors
10 9 8 7 6 BiSy-mode
60 40 20 BiAs-mode acc. IEC 61000-4-2 - 8 kV contact discharge
VC-ESD (V)
VR (V)
0 - 20 - 40 - 60 - 80 - 10 0
5 4 3 2 1 0 0.01 0.1 1 10 100 1000 10 000
10 20 30 40 50 60 70 80 90
20283
IR (A)
21106
t (ns)
Figure 5. Typical Reverse Voltage VR vs. Reverse Current IR
Figure 8. Typical Clamping performance at - 8 kV Contact Discharge (acc. IEC 61000-4-2)
16 BiSy-mode 14 12
300 200
acc. IEC 61000-4-2 contact discharge positive discharge
VC (V)
BiAs-mode 8 6 4 2
Measured acc. IEC 61000-4-5 (8/20s - wave form)
VC-ESD (V)
10
100 0 - 100 VC - 200 - 300 0 1 2 3 4 5 6
21107
VC-ESD
negative discharge
20284
0
0
5
10
15
20
25
30
IPP (A)
Figure 6. Typical Peak Clamping Voltage VC vs. Peak Pulse Current IPP
VESD (kV)
Figure 9. Typical Peak Clamping Voltage at ESD Contact Discharge (acc. IEC 61000-4-2)
80 60 40 acc. IEC 61000-4-2 + 8 kV contact discharge
VC-ESD (V)
20 0 - 20 - 40 - 60 - 10 0
10 20 30 40 50 60 70 80 90
21105
t (ns)
Figure 7. Typical Clamping Performance at + 8 kV Contact Discharge (acc. IEC 61000-4-2)
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For technical support, please contact: ESD-Protection@vishay.com
Document Number 85655 Rev. 1.7, 22-Sep-08
GMF05LC-HS3
Vishay Semiconductors Package Dimensions in millimeters (inches): LLP75-6A
18058
Document Number 85655 Rev. 1.7, 22-Sep-08
For technical support, please contact: ESD-Protection@vishay.com
www.vishay.com 5
GMF05LC-HS3
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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For technical support, please contact: ESD-Protection@vishay.com
Document Number 85655 Rev. 1.7, 22-Sep-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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